On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC

نویسندگان

چکیده

We investigate the interfaces and polarity domains at atomic scale in epitaxial AlN GaN/AlN grown by hot-wall metal organic chemical vapor epitaxy on carbon face of SiC. X-ray diffraction, potassium hydroxide (KOH) wet etching, scanning transmission electron microscopy combined provide an in-depth understanding evolution with film thickness, which is crucial to optimize growth. The a 3D mode found exhibit N-polar pyramid-type structures AlN–SiC interface. However, mixed Al-polar region Al-polarity domination along inverted evolve increasing thickness. identify inclined inversion domain boundaries propose that incorporation oxygen ⟨40–41 ⟩ facets pyramids causes inversion. find mixed-polar common easily etched remains undetected solely relying KOH etching. Atomic is, therefore, needed accurately determine polarity. GaN further shown undergo complex discussed light growth mechanisms determination methods.

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ژورنال

عنوان ژورنال: Journal of Applied Physics

سال: 2022

ISSN: ['1089-7550', '0021-8979', '1520-8850']

DOI: https://doi.org/10.1063/5.0074010